SK hynix has developed a new 4D NAND flash with a massive 238 layers, paving the way for a new fast and wide solid state drivesThe company announced.
Revealed on stage at the Flash Memory Summit in Santa Clara, the new memory chip is “the world’s first 238-layer 512GB TLC 4D NAND chip” and is expected to go into mass production in half the first of 2023.
Compared to the previous 176-layer model, the new NAND is said to provide 50% faster data transfer speeds (2.4Gb/s), 21% greater power efficiency for data reads, and a 34% increase in overall throughput.
The arrival of the 238-layer product will see SK hynix snatch the record for the world’s highest NAND stack from rival manufacturer Micron, whose latest model features a trivial 232 layer.
238 Layer 4D NAND Flash
NAND flash is a type of non-volatile memory that features all kinds of storage devices, from memory cardsAnd the USB devices And the portable drives For SSDs of servers and client devices.
The general trend in NAND flash development is towards lowering cost per capacity and increasing storage density, effectively eliminating the last remaining use cases of traditional devices. hard drives. The arrival of the 238-ply product from SK hynix represents another step in this journey.
Unlike other NAND products on the market, the latest chips in the company’s range feature a “4D” architecture, in which logic circuits are placed under the storage cells. SK hynix says this design allows for “smaller cell area per unit, resulting in higher production efficiency”.
“SK hynix has ensured world-class competitiveness in cost, performance and quality by offering a 238-layer product based on its 4D NAND technologies,” said Jungdal Choi, Head of NAND Development at SK hynix.
Perhaps contrary to expectations, the new 238-layer NAND will first make its way to client devices, giving content creators and gamers on PC reason to be excited. Only later will the new slide come smart phones and high capacity servers.
SK hynix has also revealed that it is developing a 1TB 238-layer product, which will double the storage density of the latest chip when it arrives next year. “We will continue to innovate to find breakthroughs in technological challenges,” Choi added.
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